IRF7311 datasheet(1/6 Pages) EVVOSEMI

Part #	IRF7311

Description	30V 2N-Channel Enhancement Mode MOSFET

PDF	6 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

9

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

8.2

A

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

6.5

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

5.6

A

IDM

Pulsed Drain Current2

30

A

EAS

Single Pulse Avalanche Energy3

15

mJ

IAS

Avalanche Current

22

A

PD@TC=25℃

Total Power Dissipation4

1.6

W

PD@TA=70℃

Total Power Dissipation4

1.0

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

75

℃

/W

RθJC

Thermal Resistance Junction-Case1

4.8

℃

/W

General Description

2N-ch MOSFETs with extreme high cell density,

which provide excellent RDSON and gate charge

for most of the small power switching and

load switch applications. The meet the RoHS and

The

is the highest performance trench

Product requirement with full function reliability approved.

General Features

VDS = 30V ID =

RDS(ON) <

mΩ @ VGS=10 V

RDS(ON) < 18mΩ @ VGS=4.5V

Application

Battery protection

Load switch

Uninterruptible power supply

9A

13

IRF7311

D1

D2

G1

S2

G2

S1

8

1

2

3

4

5

6

7

SOP-8

Page 1 of 6

Rev:2023A2

30V 2N-Channel Enhancement Mode MOSFET

IRF7311

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IRF7311 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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