Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

0.023

V/℃

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=15A

13

mΩ

VGS=4.5V , ID=10A

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.0

2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

-5.08

mV/℃

IDSS

Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=25℃

1

uA

VDS=24V , VGS=0V , TJ=55℃

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=15A

32

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

1.7

Ω

Qg

Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=12A

5.3

nC

Qgs

Gate-Source Charge

0.78

Qgd

Gate-Drain Charge

2.2

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V , RG=1.5

ID=20A

6.4

ns

Tr

Rise Time

39

Td(off)

Turn-Off Delay Time

21

Tf

Fall Time

4.7

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

580

pF

Coss

Output Capacitance

97

Crss

Reverse Transfer Capacitance

39

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

37

A

ISM

Pulsed Source Current2,5

75

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

1

V

Note :

1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3 .The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A

4.The power dissipation is limited by 175℃ junction temperature

5 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power

dissipation.

18

Page 2 of 6

Rev:2023A2

30V 2N-Channel Enhancement Mode MOSFET

IRF7311