1999 Apr 22

2

Philips Semiconductors

Product specification

NPN resistor-equipped double transistor

PUMH7

FEATURES

• Transistors with built-in bias

resistor R1 (typ. 4.7 k

Ω)

• No mutual interference between

the transistors

• Simplification of circuit design

• Reduces number of components

and board space.

APPLICATIONS

• Especially suitable for space

reduction in interface and driver

circuits

• Inverter circuit configurations

without use of external resistors.

DESCRIPTION

NPN resistor-equipped double

transistor in an SC-88 (SOT363)

plastic package.

PINNING

PIN

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

Fig.1 Simplified outline (SC-88; SOT363) and symbol.

handbook, halfpage

MAM380

65

4

12

3

TR1

TR2

R1

R1

13

2

4

5

6

Top view

Fig.2

Equivalent inverter

symbol.

MBK120

2, 5

6, 3

1, 4

MARKING

TYPE

NUMBER

MARKING CODE

PUMH7

Ht7

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Refer to SC-88 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

5V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

Per device

total power dissipation

−

300

mW