PUMH9 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 May 06

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped double transistor

PUMH9

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

ICEO

collector cut-off current

IB = 0; VCE =30V

−−

µA

IB = 0; VCE = 30 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

150

µA

hFE

DC current gain

IC = 5 mA; VCE = 5 V

100

−−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.25 mA

−−

100

Vi(off)

input-off voltage

IC = 100 µA; VCE =5V

−

0.7

0.5

Vi(on)

input-on voltage

IC = 1 mA; VCE = 0.3 V

1.4

0.8

−

input resistor

Ω

resistor ratio

3.7

4.7

5.7

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz −−

2.5

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