PZM-N datasheet(3/12 Pages) PHILIPS

3 / 12 page

1999 Jan 28

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

PZM-N series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous forward current

−

250

IZSM

non-repetitive peak current

tp = 100 µs; square wave;

Tamb =25 °C prior to surge

see Tables 1 and 2

Ptot

total power dissipation

Tamb =25 °C

−

300

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point Ts =60 °C

300

K/W

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

IF = 10 mA; see Fig.2

0.9

IF = 100 mA; see Fig.2

1.1

reverse current

PZM2.4N

VR =1V

µA

PZM2.7N

VR =1V

µA

PZM3.0N

VR =1V

µA

PZM3.3N

VR =1V

µA

PZM3.6N

VR =1V

µA

PZM3.9N

VR =1V

µA

PZM4.3N

VR =1V

µA

PZM4.7N

VR =1V

µA

PZM5.1N

VR = 1.5 V

µA

PZM5.6N

VR = 2.5 V

µA

PZM6.2N

VR = 3.0 V

µA

PZM6.8N

VR = 3.5 V

µA

PZM7.5N

VR = 4.0 V

µA

PZM8.2N

VR = 5.0 V

700

PZM9.1N

VR = 6.0 V

500

PZM10N

VR = 7.0 V

200

PZM11N

VR = 8.0 V

100

PZM12N

VR = 9.0 V

100

PZM13N

VR = 10.0 V

100

PZM15N

VR = 11.0 V

PZM16N

VR = 12.0 V

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