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SA1620 Datasheet(PDF) 8 Page - NXP Semiconductors |
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SA1620 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 26 page  Philips Semiconductors Product specification SA1620 Low voltage GSM front-end transceiver 1997 May 22 8 AC ELECTRICAL CHARACTERISTICS VCCXX = +3V, TA = 25°C; RF = 940MHZ; IF=400MHz, fLO=RF + IF; LO = –15dBm; unless otherwise stated. SYMBOL PARAMETER TEST CONDITIONS LIMITS1 UNITS SYMBOL PARAMETER TEST CONDITIONS MIN1 -3 σ TYP 3 σ MAX1 UNITS Low Noise Amplifier LNA12 G1hi mode 9.4 10 10.6 S Gain G1hi mode, RF = 1800MHz –2.5 dB S21 G1lo mode –13 –12 –11 dB IP3 G1lo mode 28 ∆S /∆T Gain temperature sensitivity G1hi mode 0.003 dB/ °C ∆S21/∆T Gain temperature sensitivity G1lo mode 0.0140 dB/ °C ∆S21/ ∆VCCL1 Gain/voltage sensitivity 0.1 dB/V ∆S21/∆f Gain frequency variation 0.01 dB/MHz S12 Reverse isolation G1hi mode –19 dB S11 Input match3 50 Ω –11 dB S22 Output match3 50 Ω –14 dB P-1dB Input 1dB gain compression G1hi mode –15.5 –14 –12.5 dBm IIP3 Input third order intercept –5.5 –4 –2.5 dBm IIP3/ ∆t Input third order intercept 0.011 dB/ °C NF Noise figure 1.9 dB tON Turn-on time 7 µs tOFF Turn-off time 0.5 µs Low Noise Amplifier LNA22 G2hi mode 9 10 11 dB G2hi mode, RF = 1800MHz –1.5 dB Gain G2lo1 mode –8.5 –7.5 –6.5 S G2lo2 mode –22.5 –21.5 –20.5 S21 G2lo3 mode –30 –28.5 –27 dB G2lo1 mode 18 dB IP3 G2lo2 mode 20 G2lo3 mode 25 ∆S /∆T Gain temperature sensitivity G2hi mode 0.003 dB/ °C ∆S21/∆T Gain temperature sensitivity G2lo1,2,3 modes 0.014 dB/ °C ∆S21/ ∆VCCL2 Gain/voltage sensitivity 0.1 dB/V ∆S21/∆f Gain frequency variation 0.01 dB/MHz S12 Reverse isolation G2hi mode –24 dB S11 Input match3 50 Ω –13 dB S22 Output match3 50 Ω –15 dB P-1dB Input 1dB gain compression G2hi mode –18 –16 –14 dBm IIP3 Input third order intercept –8 –6 –4 dBm IIP3/ ∆t Input third order intercept 0.019 dB/ °C NF Noise figure 2 dB tON Turn-on time 7 µs tOFF Turn-off time 0.5 µs |
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