BAS16VV datasheet(5/12 Pages) NXP

5 / 12 page

BAS16VV_BAS16VY_3

Product data sheet

Rev. 03 — 20 April 2007

5 of 12

NXP Semiconductors

BAS16VV; BAS16VY

Triple high-speed switching diodes

(1) Tamb = 150 °C; typical values

(2) Tamb =25 °C; typical values

(3) Tamb =25 °C; maximum values

Based on square wave currents.

Tj =25 °C; prior to surge

Fig 1.

Forward current as a function of forward

voltage

Fig 2.

Non-repetitive peak forward current as a

function of pulse duration; maximum values

(1) VR = 75 V; maximum values

(2) VR = 75 V; typical values

(3) VR = 25 V; typical values

f = 1 MHz; Tamb =25 °C

Fig 3.

Reverse current as a function of junction

temperature

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

300

(mA)

100

200

mbg382

VF (V)

(1)

(2)

(3)

mgw103

tp (µs)

1104

103

102

IFSM

(A)

10−1

105

104

200

mga884

100

Tj (°C)

(nA)

103

102

(2)

(1)

(3)

0.8

0.6

0.4

0.2

mbg446

VR (V)

(pF)

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