Philips Semiconductors

Preliminary specification

SA2410

2.45GHz RF power amplifier and T/R switch

2

1997 Sep 09

DESCRIPTION

The SA2410 is a GaAs monolithic power amplifier with an integrated

T/R switch designed to meet requirements for 802.11 (WLAN). The

SA2410 uses an on–chip 4 GHz oscillator to generate the negative

bias, thus eliminating the need for a negative supply. It operates

from 3V to 5.5V and consumes 125 mA with an output power of 18.5

dB (typ). It is suitable for other 2.45 GHz ISM band applications.

FEATURES

IM3<–30dBc

IM5<–50dBc

APPLICATIONS

SR01422

GND

GND

GND

GND

GND

GND

1

2

3

4

5

6

7

10

11

12

13

14

19

16

8

GND

9

31

30

29

28

2

26

25

32

24

23

26

21

20

19

18

17

GND

Figure 1.

Pin Configuration

ORDERING INFORMATION

DESCRIPTION

TEMPERATURE RANGE

ORDER CODE

DWG #

32–Pin Plastic Thin Quad Flat Package

–40

° C+85°C

SA2410

SOT401–1

GENERAL SPECIFICATIONS

Symbol

Parameter

Condition

Min

Typ

Max

Unit

T

Temperature

–40

+85

C

Supply V

3

5.5

V

Supply I

3.3 volts

125

mA

Power Amplifier

Frequency Range

2.4

2.5

GHz

IM3

IM3 2 tones

30

dBc

IM5

IM5 2 tones

50

dBc

Transmit power on

Including neg. supply

2

µs

Xmit power down

2

µs

Gain

Small signal gain

29

dB

Output power

IM3=30dBc

IM5=50dBc

125mA@3.3 volts

17.5

18.5

dBm

Eff.

Efficiency

25

%

∆ Gt1

Gain variation with temp

–40 to +85

°C

"3.5

dB

∆ Gt2

Gain variation with temp

0–70

°C

"2.0

dB

∆ Gr

Ripple

2.45

"0.05 GHz

"1

dB

∆ Gvd

Gain variation with supply

3.3 volts

"0.3 V

0.5

dB