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SA5205 Datasheet(PDF) 4 Page - NXP Semiconductors |
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SA5205 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 13 page ![]() Philips Semiconductors Product specification SA5205A Wide-band high-frequency amplifier 1997 Nov 07 4 DC ELECTRICAL CHARACTERISTICS VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C in all packages, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SA5205A UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT VCC Operating supply voltage range Over temperature 5 5 8 8 V V ICC Supply current Over temperature 20 19 25 25 32 33 mA mA S21 Insertion gain f=100MHz Over temperature 17 16.5 19 21 21.5 dB S11 Input return loss f=100MHz 25 dB S11 Input return loss DC - fMAX 12 dB S22 Output return loss f=100MHz 27 dB S22 Output return loss DC - fMAX 12 dB S12 Isolation f=100MHz -25 dB S12 Isolation DC - fMAX -18 dB tR Rise time 500 ps tP Propagation delay 500 ps BW Bandwidth ±0.5dB 450 MHz fMAX Bandwidth -3dB 550 MHz Noise figure (75 Ω) f=100MHz 4.8 dB Noise figure (50 Ω) f=100MHz 6.0 dB Saturated output power f=100MHz +7.0 dBm 1dB gain compression f=100MHz +4.0 dBm Third-order intermodulation intercept (output) f=100MHz +17 dBm Second-order intermodulation intercept (output) f=100MHz +24 dBm |
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