IRLR8743 datasheet(1/6 Pages) EVVOSEMI

Part #	IRLR8743

Description	30V N-Channel Power

PDF	6 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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30V N-Channel Power

Mosfet

General Description

These N-channel enhancement mode power mosfets used

advanced trench technology design, provided excellent Rdson

and low gate charge. Which accords with the RoHS standard.

Features

VDS = 30V,ID =90A

RDS(ON),3.8 mΩ(Typ) @ VGS =10V

RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V

Low on resistance

Low gate charge

Fast switching

Low reverse transfer capacitances

Application

DC-DC converters

Synchronous Rectifier

Absolute Maximum Ratings(TA=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

TC=25

Drain Current-ContinuousNote3

℃

9

ID

0

A

TC=100℃

63

A

Drain Current-PulsedNote1

IDM

200

A

Avalanche EnergyNote4

EAS

280

mJ

Avalanche Current

IAS

33

A

TC=25

Maximum Power Dissipation

℃

PD

105

W

Storage Temperature Range

TSTG

-55 to +150

℃

Operating Junction Temperature Range

TJ

-55 to +150

℃

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max

Unit

RθJ

Thermal Resistance,Junction-to-Case

C

-

3.3

-

℃

/W

IRLR8743

Rev:2023A2

1

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IRLR8743 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

IRLR8743 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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