Electrical Characteristics(TJ=25℃ unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,IDS=250uA

30

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

-

-

1

uA

Gate-Body Leakage

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

VGS=10V,IDS=30A

-

3.8

4.9

ON CHARACTERISTICS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Gate Threshold Voltage

VGS(TH)

VDS=VGS,IDS=250uA

1.0

1.7

2.5

V

Drain-Source On-State Resistance

RDS(ON)

m

Ω

VGS=4.5V,IDS=20A

-

6.4

7.9

DYNAMIC CHARACTERISTICS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Input Capacitance

CiSS

VDS =15V, VGS = 0V,

f=1MHz

-

1963

-

Output Capacitanc

pF

e

COSS

-

248

-

Reverse Transfer Capacitance

Crss

-

221

-

Gate Resisitance

VDD=0V,VGS=1V,

F=1MH

Rg

z

-

1.43

-

Ω

SWITCHING CHARACTERISTICS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Turn-On Delay Time

Td(on)

VGS=10V,VDs=15V,

RGEN=3Ω

ID=20A

-

55

-

Rise Tim

ns

e

tr

-

36.4

-

Turn-Off Delay Time

Td(off)

-

37.5

-

Fall Time

tf

-

14

-

Total Gate Charge at 10V

Qg

VDS=15V,IDS=45A,

VGS=10V

-

41

-

Gate to Source Gate Charg

nC

e

Qgs

-

6.4

-

Gate to Drain“Miller”Charge

Qgd

-

11

-

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Diode Forward Voltage

VSD

VGS=0V,IDS=20A

-

-

1.2

V

Reverse Recovery Time

trr

TJ=25℃,IF=20A

di/dt=100A/us

-

21.7

-

nS

Reverse Recovery Charge

Qrr

-

7.2

-

nC

Notes:

1: Repetitive rating, pulse width limited by maximum junction temperature.

2: Surface mounted on FR4 Board, t≤10sec.

3: Pulse width ≤ 300μs, duty cycle ≤ 2%.

4: EAS condition: L=0.5mH,VDD=15V,VG=10V,VGATE=30V,Start TJ=25℃.

30V N-Channel Power

IRLR8743

Rev:2023A2

2