SA8026 datasheet(4/18 Pages) PHILIPS

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Philips Semiconductors

Product specification

SA8026

2.5GHz low voltage fractional-N dual frequency

synthesizer

1999 Nov 04

Limiting values

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

VDD

Digital supply voltage

–0.3

+5.5

VDDCP

Analog supply voltage

–0.3

+5.5

∆VDDCP–VDD

Difference in voltage between VDDCP and VDD (VDDCP ≥ VDD)

–0.3

+2.8

Voltage at pins 1, 2, 5, 6, 12, 15 to 20

–0.3

VDD + 0.3

Voltage at pin 8, 9, 11

–0.3

VDDCP + 0.3

∆VGND

Difference in voltage between GNDCP and GND (these pins should be

connected together)

–0.3

+0.3

Tstg

Storage temperature

–55

+125

Tamb

Operating ambient temperature

–40

+85

Maximum junction temperature

150

Handling

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal

precautions appropriate to handling MOS devices.

Thermal characteristics

SYMBOL

PARAMETER

VALUE

UNIT

Rth j–a

Thermal resistance from junction to ambient in free air

135

K/W

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