2-109
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
BIAS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
NC
RF IN
GND
GND
GND
GND
PC
GND
RF OUT
RF OUT
GND
GND
RF OUT
RF OUT
GND
RF2132
LINEAR POWER AMPLIFIER
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
The RF2132 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-
tal cellular equipment, spread-spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50
Ω input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics over varying supply
and control voltages.
• Single 4.2V to 5.0V Supply
• Up to 29 dBm Linear Output Power
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
RF2132
Linear Power Amplifier
RF2132PCBA-41X Fully Assembled Evaluation Board
0
Rev B10 060908
0.035
0.016
0.010
0.008
8° MAX
0° MIN
0.021
0.014
0.392
0.386
0.158
0.150
0.244
0.230
0.069
0.064
0.050
0.060
0.054
-A-
0.009
0.004
Package Style: Standard Batwing
RoHS Compliant & Pb-Free Product
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