P-CH Electrical Characteristics (TA=25

unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250A

-30

-33

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=-30V,VGS=0V

-

-

-1

A

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250A

-1

-1.6

-2.5

V

VGS=-10V, ID=-2.7A

-

69

100

m

Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-2A

-

110

150

m

Forward Transconductance

gFS

VDS=-10V,ID=-2.7A

2

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

199

-

PF

Output Capacitance

Coss

-

47

-

PF

Reverse Transfer Capacitance

Crss

VDS=-15V,VGS=0V,

F=1.0MHz

-

28

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

8

-

nS

Turn-on Rise Time

tr

-

5

-

nS

Turn-Off Delay Time

td(off)

-

12

-

nS

Turn-Off Fall Time

tf

VDD=-15V,RL=15

VGS=-10V,RGEN=6

-

4

-

nS

Total Gate Charge

Qg

-

5

-

nC

Gate-Source Charge

Qgs

-

0.7

-

nC

Gate-Drain Charge

Qgd

VDS=-15V,ID=-2.7A,VGS=-10V

-

1.1

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-2.7A

-

-

-1.2

V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ” 10 sec.

3. Pulse Test: Pulse Width ” 300 s, Duty Cycle ” 2%.

4. Guaranteed by design, not subject to production