N and P-Channel Enhancement Mode Power MOSFET

Description

The RM3003S6 uses advanced trench technology to provide

excellent RDS(ON), low gate charge. This device is suitable for

use as a Battery protection or in other Switching application.

General Features

N-Channel

VDS = 30V,ID = 3.5A

RDS(ON)

GS=10V

RDS(ON)

GS=4.5V

P-Channel

VDS = -30V,ID = -2.7A

RDS(ON)

GS=-10V

RDS(ON)

GS=-4.5V

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Schematic diagram

Marking and pin Assignment

TSOT23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3003

RM3003S6

TSOT23-6L

Absolute Maximum Ratings (TA=25

unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

±20

±20

V

TA=25

3.5

-2.7

Continuous Drain Current

TA=70

ID

3

-2.1

A

Pulsed Drain Current

(Note 1)

IDM

20

-15

A

Maximum Power Dissipation

TA=25

PD

1.2

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note2)

R

N-Ch

104

/W

Thermal Resistance,Junction-to-Ambient

(Note2)

R

P-Ch

104

/W

N-channel

P-channel

2018-09/15

REV:O

RM3003S6

Halogen-free

3003

Ø180mm

8mm

3000units