3-107
3
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
RF IN
VREF
VBIAS
RF OUT
RF OUT
NC
NC
NC
1
2
3
4
8
7
6
5
PACKAGE BASE
GND
Bias
Circuit
RF3800
GaAs HBT PRE-DRIVER AMPLIFIER
The RF3800 is specifically designed for wireless infrastructure applications at
450MHz and 850MHz. Using a highly reliable GaAs HBT fabrication process, this
high-performance single-stage amplifier achieves high output power over a broad
frequency range. The RF3800 also provides excellent efficiency and thermal stabil-
ity through the use of a thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incorporation of an optimized evaluation
board design provided to achieve proper 50
Ω operation. Various evaluation board
configurations are available to address a broad range of wireless infrastructure
applications.
Features
6W Output Power
High Linearity
45% Power-Added Efficiency
Thermally-Enhanced AlN Packag-
ing
150MHz to 960MHz Operation
5V to 8V Supply with Adjustable
Bias
Applications
Driver for 450MHz and 850MHz
Basestation Amplifiers
PA Stage for Commercial Wire-
less Infrastructure
RF3800
GaAs HBT Pre-Driver Amplifier
RF3800PCBA-416
Fully Assembled Evaluation Board
Rev A9 DS070130
RF3800GaAs
HBT Pre-Driver
Amplifier
RoHS Compliant & Pb-Free Product
Package Style: AlN
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