
2-655
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
5
6
9
10
11
4
3
2
1
13
14
16
7
8
15
12
GND
RF IN
RF IN
GND
GND
GND
RF OUT
RF OUT
Interstage
Match
Input
Match
Output
Match
Interstage
Match
Bias
Bias
RF5300
3V, 5GHz LINEAR POWER AMPLIFIER
• IEEE802.11a/n WLAN Applications
• HyperLAN
• Wireless LAN Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum and MMDS Systems
The RF5300 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for battery-powered
WLAN applications such as PC cards, mini PCI, and
compact flash applications. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as the final RF amplifier in 5GHz WLAN and other
spread-spectrum transmitters. The device is provided in a
16-pin leadless chip carrier with a backside ground. The
RF5300 is designed to maintain linearity over a wide
range of supply voltage and power output. The RF5300 is
designed to reduce end-product BOM count by integrat-
ing all matching circuitry onto the chip.
• Single Power Supply 3.0V to 5.0V
•50
Ω Input/Output Impedance
• 30dB Gain (typ. UNII-1 and 2)
• High Linearity
• 4900MHz to 5850MHz Frequency Range
RF5300
3V, 5GHz Linear Power Amplifier
RF5300PCBA-41X Fully Assembled Evaluation Board
0
Rev A8 051107
Dimensions in mm.
Shaded lead is pin 1.
0.1 C
0.102 REF
0.203 REF
0.925
0.775
C
0.08 C
0.15 C
2 PLCS
0.15 C
2 PLCS
3.00
A
3.00
B
Pin 1 ID
0.10
C AB
M
0.40
0.20
TYP
1.70
1.70
0.28
0.18
TYP
0.50 TYP
Pin 1 ID
0.05
Package Style: QFN, 16-Pin, 3x3
RoHS Compliant & Pb-Free Product