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AMIS-710404 Datasheet(PDF) 4 Page - AMI SEMICONDUCTOR |
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AMIS-710404 Datasheet(HTML) 4 Page - AMI SEMICONDUCTOR |
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4 / 7 page ![]() AMIS-710404-A8: 400dpi CIS Module Data Sheet 6.0 Electro-Optical Characteristics at 25 °C Table 4: Electro-Optical Characteristics at 25 °C Parameter Symbol Parameter Units Note Number of photo detectors 896 Elements Pixel-to-pixel spacing 63.5 µm Line scanning rate Tint (1) 2.92 msec @ 307kHz clock frequency Clock frequency (2) f 307 kHz Bright output voltage (3) Video output 2.0+/- 0.2 Volt Bright output non-uniformity (4) Up +/-30 % Dark non-uniformity (5) Ud <200 mV Dark output voltage (6) Dark level (DL) -200<DL<200 mV Modulation transfer function (7) MTF >45 % Notes: (1) Tint: line scanning rate or integration time. Tint is determined by the interval between two start pulses (SP). (2) f: main clock frequency also equals the video sampling frequency. (3) Video output level is controlled with an adjustment as well as integration time. (4) Up = {[Vp(max) –Vp(min)]/Vp(max)}x100% Where VP(max) = maximum peak pixel and VP(min) = minimum pixel. (5) Ud = Vdmax – Vdmin Vdmin is the minimum output voltage with LED off. Vdmax is maximum output voltage with LED off. (6) This level is measured from the reset level, which is located between the pixels, during the pixel reset duration. The reset level is at ground, 0V. It can be adjusted with the offset potentiometer located on the module. (7) MTF = [(Vp(n) – Vp(n+1)] / (Vp(n)+ Vp(n+1)] x 100 [%] Vp(n): n th maximum output pixel from a 4.0 lp/mm target. V(n+1): (n+1) th minimum output pixel from a 4.0 lp/mm target. (8) lp / mm: line pair per mm 7.0 Recommended Operating Conditions at 25 °C Table 5: Recommended Operating Conditions (25 °C) Item Symbol Min. Typ. Max. Units Vdd 4.5 5.0 5.5 V Vn. -12 -5 -4.0 V Idd 30 ma In 8 ma ILED 250 300 ma Power supply VLED +5 V Input voltage at digital high Vih Vdd -1.0 Vdd -.5 Vdd V Input voltage at digital low Vil 0 0.6 V Clock frequency f 0. 0.30 1.0 MHz Clock pulse high duty cycle 25 % Clock pulse high duration 0.8 us Integration time Tint 3.0 ms Operating temperature (1) Top 25 50 °C Note: (1) See the note under Table 3. 4 AMI Semiconductor – July 06, M-20592-001 www.amis.com |
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