MB10S

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2

ABSOLUTE MAXIMUM RATINGS

(Values are at TA = 25C unless otherwise noted)

Symbol

Parameter

Value

Unit

VRRM

Maximum Repetitive Reverse Voltage

1000

V

VRMS

Maximum RMS Bridge Input Voltage

700

V

VR

DC Reverse Voltage (Rated VR)

1000

V

IF(AV)

Average Rectified Forward Current at TA = 50C

On Glass−Epoxy PCB

On Aluminum Substrate

0.5

0.8

A

IFSM

Non−Repetitive Peak Forward Surge Current:

8.3 ms Single Half−Sine−Wave

35

A

TSTG

Storage Temperature Range

−55 to +150

C

TJ

Operating Junction Temperature Range

−55 to +150

_C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

PD

Power Dissipation

1.4

W

RJA

Thermal Resistance, Junction to Ambient, per Leg (Note 1)

85

C/W

RJL

Thermal Resistance, Junction to Lead, per Leg (Note 1)

20

C/W

1. Device mounted on PCB with 0.5  0.5 inch (13  13 mm) lead length.

ELECTRICAL CHARACTERISTICS (Values are at TA = 25C unless otherwise noted)

Symbol

Parameter

Conditions

Value

Unit

VF

Maximum Forward Voltage, per Diode

IF = 0.5 A

1.0

V

IR

Maximum Reverse Current, per Diode

at Rated VR

TA = 25C

5.0

mA

TA = 125C

0.5

mA

I2t

I2t Rating for Fusing

t < 8.3 ms

5.0

A2s

CT

Typical Capacitance, per Diode

VR = 4.0 V, f = 1.0 MHz

13

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Part Number

Marking

Package

Shipping†

MB10S

MB10S

SOIC4 W

(Pb−Free)

3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.