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IFBF512-3

Document Number: IF35113.R00

InterFET Corporation

April, 2020

IFBF512-3

InterFET

Product

Folder

Technical

Support

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Electrical Characteristics

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

Value

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

-20

V

IFG

Continuous Forward Gate Current

10

mA

PD

Continuous Device Power Dissipation

300

mW

P

Power Derating

1.7

mW/°C

TJ

Operating Junction Temperature

-55 to 125

°C

TSTG Storage Temperature

-65 to 150

°C

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFBF512

IFBF513

Unit

Min

Max

Min

Max

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = -1μA

-20

-20

V

IGSS

Gate to Source

Reverse Current

VGS = -15V, VDS = 0V, TA = 25°C

-10

-10

nA

VGS(F)

Gate to Source

Forward Voltage

VDS = 0V, IG = 1mA

1

1

V

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = 10V, ID = 1nA

-1.5

-2.5

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = 10V

(Pulsed)

6.0

12

10

18

mA

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFBF512

IFBF513

Unit

Min

Max

Min

Max

GFS

Forward

Transconductance

VDS = 10V, VGS = 0V, f = 1kHz

6

7

mS

GOS

Output

Conductance

VDS = 10V, VGS = 0V, f = 1MHz

100

120

uS

Ciss

Input Capacitance

VDS = 15V, VGS = 0V, f = 1MHz

5

5

pF

Crss

Reverse Transfer

Capacitance

VDS = 15V, VGS = 0V, f = 1MHz

1.5

1.5

pF