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IFN201-A-2

Document Number: IF35115 Rev A01

InterFET Corporation

May, 2023

IFN201-A-2

InterFET

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Folder

Technical

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Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFN201A

IFN201

IFN202

Unit

Min

Max

Min

Max

Min

Max

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = -1μA

-40

-40

-40

V

IGSS

Gate to Source

Reverse Current

VGS = -20V, VDS = 0V

-10

-10

-10

pA

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = 20V, ID = 10nA

-0.5

-1.0

-0.3

-1.5

-0.8

-4.0

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = 20V

(Pulsed)

0.2

0.8

0.2

1

0.9

4.5

mA

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

IFN201A

IFN201

IFN202

Unit

Min

Typ

Min

Typ

Min

Typ

GFS

Forward

Transconductance

VDS = 20V, VGS = 0V, f = 1kHz

500

500

1000

uS

GOS

Output Conductance

VDS = 20V, VGS = 0V, f = 1kHz

1

1

3.5

uS

Ciss

Input Capacitance

VDS = 20V, VGS = 0V, f = 1MHz

4

4

4

pF

Crss

Reverse Transfer

Capacitance

VDS = 20V, VGS = 0V, f = 1MHz

1

1

1

pF

en

Noise Voltage

VDS = 10V, VGS = 0V, f = 1kHz

3

3

3

nV/√Hz

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

SOT-23

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

-40

V

IFG

Continuous Forward Gate Current

50

mA

PD

Continuous Device Power Dissipation1

350

mW

P

Power Derating1

2.8

mW/°C

TJ

Operating Junction Temperature

-55 to 150

°C

TSTG Storage Temperature

-55 to 150

°C

1 Thermal power dissipation and derating values obtained with gate pin (substrate) thermally connected to pad and/or internal layer.