Electronic Components Datasheet Search
  English  ▼

X  

KSP13 Datasheet(PDF) 1 Page - ON Semiconductor

Part # KSP13
Description  NPN Epitaxial Silicon Darlington Transistor
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KSP13 Datasheet(HTML) 1 Page - ON Semiconductor

  KSP13 Datasheet HTML 1Page - ON Semiconductor KSP13 Datasheet HTML 2Page - ON Semiconductor KSP13 Datasheet HTML 3Page - ON Semiconductor KSP13 Datasheet HTML 4Page - ON Semiconductor KSP13 Datasheet HTML 5Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
DATA SHEET
www.onsemi.com
© Semiconductor Components Industries, LLC, 2002
October, 2023 − Rev. 3
1
Publication Order Number:
KSP13/D
NPN Epitaxial Silicon
Darlington Transistor
KSP13
Features
• Collector−Emitter Voltage: VCES=30 V
• Collector Power Dissipation: PC (max)=625 mW
• These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector−Base Voltage
30
V
VCES
Collector−Emitter Voltage
30
V
VEBO
Emitter−Base Voltage
10
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Parameter
Test Condition
Min
Max
Unit
BVCES
Collector−Emitter Breakdown Voltage
IC = 100 mA, IB = 0
30
−
V
ICBO
Collector Cut−off Current
VCB = 30 V, IE = 0
−
100
nA
IEBO
Emitter Cut−off Current
VEB = 10 V, IC = 0
−
100
nA
hFE
DC Current Gain (Note 1)
VCE = 5 V, IC = 10 mA
5k
−
VCE = 5 V, IC = 100 mA
10k
−
VCE(sat)
Collector−Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
−
1.5
V
VBE(on)
Base−Emitter On Voltage
VCE = 5 V, IC = 100 mA
−
2.0
V
fT
Current Gain Bandwidth Product
VCE = 5 V, IC = 10 mA
f = 100 MHz
125
−
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
MARKING DIAGRAM
TO−92 3 LF
CASE 135AR
A
= Assembly Code
KSP13 = Device Code
Y
= Year
WW
= Work Week
TO−92 3
CASE 135AN
1:Emitter
2:Base
3:Collector
Device
Package
Shipping
ORDERING INFORMATION
KSP13BU
TO−92 3
(Pb−Free)
10000 /
Bulk Bag
KSP13TA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
A KS
P13
YWW
1 2
3
1
2
3


Similar Part No. - KSP13

ManufacturerPart #DatasheetDescription
logo
Fairchild Semiconductor
KSP13 FAIRCHILD-KSP13 Datasheet
33Kb / 4P
Darlington Transistor
KSP13 FAIRCHILD-KSP13 Datasheet
39Kb / 4P
NPN Epitaxial Silicon Darlington Transistor
KSP13 FAIRCHILD-KSP13 Datasheet
39Kb / 4P
Darlington Transistor
KSP13 FAIRCHILD-KSP13 Datasheet
39Kb / 4P
Darlington Transistor
KSP13BU FAIRCHILD-KSP13BU Datasheet
39Kb / 4P
NPN Epitaxial Silicon Darlington Transistor
More results

Similar Description - KSP13

ManufacturerPart #DatasheetDescription
logo
Fairchild Semiconductor
KSE800 FAIRCHILD-KSE800 Datasheet
73Kb / 3P
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
logo
List of Unclassifed Man...
2SD1210 ETC-2SD1210 Datasheet
41Kb / 1P
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR
2SD1297 ETC-2SD1297 Datasheet
38Kb / 1P
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR
2SD1392 ETC-2SD1392 Datasheet
69Kb / 2P
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR
2SD1672 ETC-2SD1672 Datasheet
34Kb / 1P
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR
logo
Fairchild Semiconductor
TIP100 FAIRCHILD-TIP100_08 Datasheet
551Kb / 5P
NPN Epitaxial Silicon Darlington Transistor
495220TU FAIRCHILD-495220TU Datasheet
99Kb / 2P
NPN Epitaxial Silicon Darlington Transistor
KSP13BU FAIRCHILD-KSP13BU Datasheet
39Kb / 4P
NPN Epitaxial Silicon Darlington Transistor
logo
New Jersey Semi-Conduct...
TIP140T NJSEMI-TIP140T Datasheet
69Kb / 2P
NPN Epitaxial Silicon Darlington Transistor
logo
Tiger Electronic Co.,Lt...
MJE802G TGS-MJE802G Datasheet
214Kb / 1P
NPN Epitaxial Silicon Darlington Transistor
More results


Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com