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T6421M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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T6421M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISTM4035 eq T6421M BI-DIRECTIONAL Thyristors www.iscsemi.com 1 FEATURES · Improved glass passivation for high reliability and exceptional stability at high temperature · High di/dt and dv/dt capabilities · Low thermal resistance APPLICATIONS · Medium power switching · Phase control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDRM Repetitive Peak Off-state Voltage 600 V VRRM Repetitive Peak Reverse Voltage 600 V IT(AV) Max. average forward current Tc= 85℃ 180 ° conduction, half sine wave 25 A ITRMS RMS forward current 40 A ITSM Non-repetitive Peak On-state Current t = 10ms No voltage reapplied 420 A t = 8.3ms 440 t = 10ms 100% VRRM reapplied 350 t = 8.3ms 370 I2t I2t Value for Fusing t = 10ms No voltage reapplied 867 A2s*103 t = 8.3ms 790 t = 10ms 100% VRRM reapplied 615 t = 10ms No voltage reapplied 560 di/dt Max. rate of rise of turned-on current 200 A/us dv/dt Max. critical rate of rise of 100 V/us VT(TO)1 Low level value of threshold voltage (16.7%x πx IF(AV)<I<πx IF(AV)), TJ=TJmax 0.99 V VT(TO)2 High level value of threshold voltage (I > π x IF(AV)), TJ= TJmax 1.40 V PGM Maximum peak gate power 8 W PG(AV) Maximum average gate power 2.0 W TJ Virtual Junction Temperature -65~125 ℃ Tstg Storage Temperature -65~125 ℃ |
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