5.3 ESD Ratings—IEC Specification

VALUE

UNIT

V(ESD)

Electrostatic discharge

IEC 61000-4-2 contact discharge

±30000

V

IEC 61000-4-2 air-gap discharge

±30000

5.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

TA

Operating free-air temperature

-55

150

°C

5.5 Thermal Information

THERMAL METRIC (1)

TSD05C

TSD36C

UNIT

DYF (SOD-323)

DYF (SOD-323)

2 PINS

2 PINS

RθJA

Junction-to-ambient thermal resistance

672.0

686.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

230.5

267.0

°C/W

RθJB

Junction-to-board thermal resistance

541.4

560.5

°C/W

ΨJT

Junction-to-top characterization parameter

64.4

91.4

°C/W

ΨJB

Junction-to-board characterization parameter

527.5

546.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

5.6 Electrical Characteristics - TSD05C

At TA=25

℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50nA, across operating temperature range

-5.5

5.5

V

VBR

Break-down

voltage

IIO = 1mA, IO to GND and GND to IO

7

8

9

V

ILEAK

Reverse leakage

current

VIO = 5.5V, IO to GND or GND to IO

5

10

nA

VCLAMP

Surge clamping

voltage, tp =

8/20µs (2)

IPP = 24A, IO to GND or GND to IO

10.7

13.8

V

IPP = 30 A, IO to GND or GND to IO

11.5

15

V

TLP clamping

voltage, tp =

100ns

IPP = 16 A, IO to GND or GND to IO

9.3

V

RDYN

Dynamic

resistance (3)

IO to GND

0.15

Ω

GND to IO

CL

Line capacitance VIO = 0V; ƒ = 1 MHz, IO to GND

4

7

pF

(1)

Typical parameters are measured at 25

℃

(2)

Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5

(3)

Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A

TSD05C, TSD36C

SLVSH42B – JUNE 2023 – REVISED JULY 2024

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