5.7 Electrical Characteristics - TSD36C

At TA=25

℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50nA, across operating temperature range

36

V

VBR

Breakdown voltage

IIO = 10mA, I/O to GND and GND to I/O

37.8

41.2

44.2

V

ILEAK

Reverse leakage

current

VIO = 36V, IO to GND or GND to IO

5

10

nA

VCLAMP

Surge clamping

voltage, tp =

8/20 µs (2)

IPP = 1A, IO to GND or GND to IO

47

V

IPP = 5A, IO to GND or GND to IO

64

V

IPP = 6.5A, IO to GND or GND to IO

71

V

TLP clamping

voltage, tp = 100ns

IPP = 16A, IO to GND or GND to IO

56

V

RDYN

Dynamic

resistance (3)

IO to GND

0.6

Ω

GND to IO

CL

Line capacitance

VIO = 0V; ƒ = 1MHz, IO to GND

4.3

6

pF

(1)

Typical parameters are measured at 25

℃

(2)

Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5

(3)

Extraction of RDYN using least squares fit of TLP characteristics between I = 10A and I = 20A

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TSD05C, TSD36C

SLVSH42B – JUNE 2023 – REVISED JULY 2024

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