SEMICONDUCTOR

DIM2400ESS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Collector cut-off current

-

-

3

mA

-

-

75

mA

Gate leakage current

-

-

12

µA

Gate threshold voltage

4.5

5.5

6.5

V

Collector-emitter saturation voltage

-

2.2

2.8

V

-

2.6

3.3

V

Diode forward current

DC

-

2400

A

Diode maximum forward current

-

4800

A

Diode forward voltage

-

2.1

2.4

V

-

2.1

2.4

V

Input capacitance

270

-

nF

Module inductance

-

-

10

-

nH

Internal resistance

-

-

0.09

-

m

Ω

-

16500

-

A

≤ 10µs,

-

13500

-

A

IEC 60747-9

Note:

Measured at the power busbars and not the auxiliary terminals

M