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DIM2400ESS12 Datasheet(PDF) 5 Page - Dynex Semiconductor

Part # DIM2400ESS12
Description  Single Switch IGBT Module
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM2400ESS12 Datasheet(HTML) 5 Page - Dynex Semiconductor

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SEMICONDUCTOR
DIM2400ESS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5/9
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(off)
Turn-off delay time
IC = 2400A
-
1370
-
ns
tf
Fall time
VGE = ±15V
-
230
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
520
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 1
Ω
-
250
-
ns
tr
Rise time
L
∼ 50nH
-
230
-
ns
EON
Turn-on energy loss
-
180
-
mJ
Qg
Gate charge
-
26
-
µC
Qrr
Diode reverse recovery charge
IF = 2400A, VR = 600V,
-
310
-
µC
Irr
Diode reverse current
dlF/dt = 9500A/µs
-
1000
-
A
EREC
Diode reverse recovery energy
-
150
-
mJ
Tcase = 125° C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(off)
Turn-off delay time
IC = 2400A
-
1570
-
ns
tf
Fall time
VGE = ±15V
-
230
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
600
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 1
Ω
-
360
-
ns
tr
Rise time
L
∼ 50nH
-
290
-
ns
EON
Turn-on energy loss
-
200
-
mJ
Qrr
Diode reverse recovery charge
IF = 2400A, VR = 600V,
-
540
-
µC
Irr
Diode reverse current
dlF/dt = 8500A/µs
-
1260
-
A
EREC
Diode reverse recovery energy
-
260
-
mJ



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