IRF840_02 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	IRF840

Description	N-CHANNEL 500V - 0.75廓 - 8A TO-220 PowerMesh?줚I MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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May 2002

IRF840

N-CHANNEL 500V - 0.75

Ω - 8A TO-220

PowerMesh™II MOSFET

s

TYPICAL RDS(on) = 0.75 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns switching speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVES

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

IRF840

500 V

< 0.85

Ω

8 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

8A

ID

Drain Current (continuos) at TC = 100°C

5.1

A

IDM (l)

Drain Current (pulsed)

32

A

PTOT

Total Dissipation at TC = 25°C

125

W

Derating Factor

1.0

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3.5

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤8A, di/dt ≤50A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

INTERNAL SCHEMATIC DIAGRAM

1

2

3

TO-220

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