IRF840_02 datasheet(3/8 Pages) STMICROELECTRONICS

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IRF840

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 250 V, ID = 3.5 A

RG =4.7Ω VGS = 10 V

(see test circuit, Figure 3)

Total Gate Charge

VDD = 400V, ID = 7 A,

VGS = 10V

29.6

Qgs

Gate-Source Charge

4.9

Qgd

Gate-Drain Charge

13.9

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 400V, ID = 7 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

9ns

Fall Time

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 8 A, VGS = 0

1.6

trr

Reverse Recovery Time

ISD = 7 A, di/dt = 100A/µs

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

384

Qrr

Reverse Recovery Charge

2.2

µC

IRRM

Reverse Recovery Current

11.8

Safe Operating Area

Thermal Impedence

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