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JCS22N50FC Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS22N50FC Datasheet(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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2 / 8 page ![]() JCS22N50FC R 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) 单 位 数 值 项 目 符 号 Value Parameter Symbol Unit 最高漏极-源极直流电压 Drain-Source Voltage VDSS 500 V A A ID 22.0* 12.6* 连续漏极电流 T=25℃ T=100℃ Drain Current -continuous 最大脉冲漏极电流(注 1) Drain Current -pulse (note 1) IDM 88* ±30 941 22.0 7.62 A V 最高栅源电压 VGSS EAS IAR Gate-Source Voltage 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy(note 2) mJ A 雪崩电流(注 1) Avalanche Current (note 1) 重复雪崩能量(注 1) Repetitive Avalanche Current EAR (note 1) mJ 二极管反向恢复最大电压变 化速率(注 3) dv/dt 1.636 V/ns Peak Diode Recovery dv/dt (note 3) PD 76.2 0.61 W TC=25℃ -Derate above 25℃ 耗散功率 Power Dissipation W/℃ 最高结温及存储温度 Operating and Storage Temperature Range 引线最高焊接温度 TJ,TSTG -55~+150 ℃ ℃ Maximum Lead Temperature TL for Soldering Purposes 300 *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 版本:201903A 2/8 |
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