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JCS22N50FC Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS22N50FC Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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4 / 8 page ![]() JCS22N50FC R 电特性 ELECTRICAL CHARACTERISTICS 项 目 符 号 测试条件 最小 典型 最大 单位 Parameter Symbol Tests conditions Min Typ Max Units 开关特性 Switching –Characteristics 延迟时间 Turn-On delay time 上升时间 Turn-On rise time td(on) - - - - - - - 29.2 49.6 ns 59.8 101 ns tr V =250V,I =22A,R =25Ω DD D G td(off) tf (note 4,5) 160.4 272 ns 延迟时间 Turn-Off delay time 下降时间 Turn-Off Fall time 80 136 ns 栅极电荷总量 Total Gate Charge 栅-源电荷 Gate-Source charge 栅-漏电荷 Gate-Drain charge Qg 47.59 62 nC VDS =400V , ID=22A Qgs Qgd 9.97 - - nC nC VGS =10V(note 4,5) 18.54 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain-Source Diode Forward Current IS - - - - - 22 88 A A V 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM 正向最大连续电流 Maximum Continuous Drain-Source VSD Diode Forward Current V =0V, I =22A 1.4 GS S 反向恢复时间 trr 193.7 1.34 ns Reverse recovery time 反向恢复电荷 V =0V, I =22A GS S dIF/dt=100A/μs (note 4) Qrr μC Reverse recovery charge 热特性 THERMAL CHARACTERISTIC 项 目 符 号 最大值 单 位 Parameter Symbol Value Unit 结到管壳的热阻 Rth(j-c) 1.641 62.5 ℃/W ℃/W Thermal Resistance, Junction to Case 结到环境的热阻 Rth(j-A) Thermal Resistance, Junction to Ambient Notes: 注: 1:Pulse width limited by maximum junction temperature 1:脉冲宽度由最高结温限制 2:L=3.5mH, I AS =22A, V DD =50V, R G =25 Ω,Starting T J =25℃ 2:L=3.5mH, IAS=22A, VDD=50V, RG=25 Ω,起始结温 TJ=25℃ 3:I SD ≤18A,di/dt≤200A/μs, VDD≤BV DSS , Starting T J =25℃ 4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2% 5:Essentially independent of operating temperature 3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度 ≤300μs,占空比≤2% 5:基本与工作温度无关 版本:201903A 4/8 |
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