G

Page: 2/4

ISSUED DATE :2006/12/06

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-1.2

-

-2.4

V

Forward Transconductance

-

17

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=55 : )

-

-

-5

uA

-

-

32

-

-

60

m

-

18.7

23

Gate-Source Charge

-

2.54

-

Gate-Drain (“Miller”) Change

-

5.4

-

nC

-

9

13

Rise Time

-

25

-

Turn-off Delay Time

-

20

-

Fall Time

-

12

-

ns

Input Capacitance

-

920

1100

Output Capacitance

-

190

-

Reverse Transfer Capacitance

-

122

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.0

V

-

-

-18

A

-

21.4

-

ns

Reverse Recovery Charge

-

13

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by safe operating area.

2. Staring Tj=25 , V

:

3. Pulse width 300us, duty cycle 2%.