G

Page: 1/4

ISSUED DATE :2006/12/06

REVISED DATE :

G

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The G

resistance.

The through-hole version (TO-251) is available for low-profile applications and suited for high current load

applications.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

-18

A

-14

A

-40

A

Total Power Dissipation

60

W

Linear Derating Factor

0.4

W/ :

61

mJ

Single Pulse Avalanche Current

-35

A

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +175

:

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-c

2.5

: /W

Thermal Resistance Junction-ambient

Max.

Rthj-a

50

: /W

-30V

32m

-18A

Pb Free Plating Product

TO-251