SSF2341EU

©Silikron Microelectronics (Suzhou) Co.,Ltd

www.silikron.com

Version : 1.0

page 1 of 7

Main Product Characteristics:

Features and Benefits:

Description:

Absolute Max Rating: @T

A=25℃ unless otherwise specified

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V ①

-4

A

ID @ TC = 70°C

Continuous Drain Current, VGS @ 10V ①

-2.4

IDM

Pulsed Drain Current ②

-30

PD @TC = 25°C

Power Dissipation ③

1.4

W

VDS

Drain-Source Voltage

-20

V

VGS

Gate-to-Source Voltage

±8

V

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJA

Junction-to-

ambient (t ≤ 10s) ④

—

90

°C /W

VDSS

-20V

RDS(on)

31

mΩ (typ.)

ID

-4A ①

Pin Assignments

Schematic Diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



150℃ operating temperature

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.

SOT-23