SSF2341EU datasheet(2/7 Pages) SILIKRON

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SSF2341EU

©Silikron Microelectronics (Suzhou) Co.,Ltd

www.silikron.com

Version : 1.0

page 2 of 7

Electrical Characterizes @T

A=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-20

—

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS=-4.5V,ID = -4A

—

VGS=-2.5V,ID = -4A

VGS(th)

Gate threshold voltage

-0.3

—

-0.9

VDS = VGS, ID = -250μA

IDSS

Drain-to-Source leakage current

—

-1

μA

VDS = -20V,VGS = 0V

IGSS

Gate-to-Source forward leakage

—

μA

VGS =8V

—

-10

VGS = -8V

Total gate charge

—

9.8

—

ID = -4A,

VDS=-10V,

VGS = -4.5V

Qgs

Gate-to-Source charge

—

0.72

—

Qgd

Gate-to-Drain("Miller") charge

—

3.3

—

td(on)

Turn-on delay time

—

9.7

—

VGS=-4.5V,

VDS =-10V,

RGEN=3Ω,

Rise time

—

8.4

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

837

—

VGS = 0V,

VDS =-10V,

ƒ = 1MHz

Coss

Output capacitance

—

117

—

Crss

Reverse transfer capacitance

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode) ①

—

-4

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

-30

VSD

Diode Forward Voltage

—

-0.76

-1.0

IS=-1A, VGS=0V

trr

Reverse Recovery Time

—

8.7

—

TJ = 25°C, IF =-4A,

di/dt = 100A/μs

Qrr

Reverse Recovery Charge

—

2.3

—

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