SSF2445CU datasheet(2/6 Pages) SILIKRON

2 / 6 page

SSF2445CU

©Silikron Microelectronics (Suzhou) Co.,Ltd

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Version: 1.1

page 2 of 6

Thermal Resistance

Symbol

Characteristics

Typ.

Max.

Units

N-channel

P-channel

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

116

°C /W

Junction-to-Ambient (PCB mounted, steady-state) ④

—

°C /W

Electrical Characteristics @T

A=25°C unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown

voltage

N-channel

—

VGS = 0V, ID = 250μA

P-channel

-20

—

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source

on-resistance

N-channel

—

mΩ

VGS=4.5V,ID = 3.6A

P-channel

—

VGS=-4.5V,ID = -3A

N-channel

—

VGS=3.5V,ID = 3.1A

P-channel

—

100

VGS=-3.5V,ID = -2A

VGS(th)

Gate threshold voltage

N-channel

0.4

—

VDS = VGS, ID = 250μA

N-channel

-0.4

—

-1

VDS = VGS, ID = -250μA

IDSS

Drain-to-Source leakage

current

N-channel

—

μA

VDS = 20V,VGS = 0V

P-channel

—

-1

VDS = -20V,VGS = 0V

IGSS

Gate-to-Source forward

leakage

N-channel

—

100

VGS =8V

N-channel

—

-100

VGS = -8V

P-channel

—

100

VGS =8V

P-channel

—

-100

VGS = -8V

Ciss

Input capacitance

N-channel

—

295

—

VGS = 0V,

VDS = 20V,

ƒ = 1.0MHz

Coss

Output capacitance

N-channel

—

Crss

Reverse transfer capacitance

N-channel

—

Ciss

Input capacitance

P-channel

—

396

—

VGS = 0V,

VDS = -20V,

ƒ = 1.0MHz

Coss

Output capacitance

P-channel

—

Crss

Reverse transfer capacitance

P-channel

—

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