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IRLR3110ZPBF Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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IRLR3110ZPBF Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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1 / 4 page  Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Limit Symbol Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 78 A Drain Current-Continuous(TC=100℃) D (100℃) I 60 A Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 125 W Derating factor 0.83 W/℃ Single pulse avalanche energy (Note 5) AS E 320 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 1.2 ℃ /W N-Channel Super Trench Power MOSFET Features VDS= 100V, ID= 78 A RDS(ON) < 9.0mΩ @ VGS = 10V RDS(ON) < 12 mΩ @ VGS =4.5V ● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment TO-252-2L Top View Schematic Diagram IRLR3110ZPBF v1.0 |
Similar Part No. - IRLR3110ZPBF |
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Similar Description - IRLR3110ZPBF |
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