Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

100

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=100V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.2

3

V

VGS=10V, ID=39A

-

9.0

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=39A

-

12

mΩ

Forward Transconductance

gFS

VDS=10V,ID=39A

40

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

4200

5480

PF

Output Capacitance

Coss

-

354

425

PF

Reverse Transfer Capacitance

Crss

VDS=50V,VGS=0V,

F=1.0MHz

-

23

30

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

15

-

nS

Turn-on Rise Time

tr

-

10

-

nS

Turn-Off Delay Time

td(off)

-

41

-

nS

Turn-Off Fall Time

tf

VDD=50V,ID=39A

VGS=10V,RG=4.7Ω

-

6

-

nS

Total Gate Charge

Qg

-

65

nC

Gate-Source Charge

Qgs

-

15.3

nC

Gate-Drain Charge

Qgd

VDS=50V,ID=39A,

VGS=10V

-

9

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=78A

-

1.2

V

Diode Forward Current

(Note 2)

IS

-

-

78

A

Reverse Recovery Time

trr

-

101

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = IS

di/dt = 100A/μs

(Note3)

-

193

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25 ,V

℃ DD=50V,VG=10V,L=0.5mH,Rg=25Ω

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IRLR3110ZPBF

v2.0