HANDLING PRECAUTIONS

DIE ATTACHMENT

Die attach can be accomplished with Au-Ge (390

± 10°C) preforms in

a forming gas environment. Epoxy die attach is not recommended.

BONDING

Gate and drain bonding wires should be semi-hard gold wire (3 to 8%

elongation) 30 microns or less in diameter.

Bonding should be performed with a wedge tip that has a taper of

approximately 15

°. Die attach and bonding time should be kept to a

minimum. As a general rule, the bonding operation should be kept within

a 300

°Cto10minutecurve.Iflongerperiodsarerequired,thetempera-

ture should be lowered.

PRECAUTIONS

The user must operate in a clean, dry environment. The chip channel

is glassivated for mechanical protection only and does not preclude the

necessity of a clean environment.

The bonding equipment should be periodically checked for sources of

surge voltage and should be properly grounded at all times. In fact, all

test and handling equipment should be grounded to minimize the

possibilities of static discharge.

400

50

52

430

228

62

130

131

50

S

S

G

D

Die Thickness: 110 to 160

µm

Recommended Bonding Area.

Glassivated Area

Plated Wraparound (Optional)

PACKAGE OUTLINE 75

NE9000, NE9001, NE9002 SERIES

SYMBOLS

PARAMETERS

UNITS

RATINGS

Drain to Source Voltage

V

20

Gate to Source Voltage

V

-9

Drain Current

NE900000, NE900075/89

mA

150

NE900100, NE900175

mA

300

NE900200, NE900275

mA

600

Gate Current

NE900000, NE900075/89

mA

1.3

NE900100, NE900175

mA

2.6

NE900200, NE900275

mA

5

POWER DERATING CURVE

3

2

1

0

0

50

100

150

200

NE9002

NE9001

NE9000

°C)

φ 1.8

0.5 ± 0.1

2.7 TYP

2.7±0.3

2.3±0.1

3.0 MIN BOTH

LEADS

7.0

9.8 MAX

1.13

0.9 MAX

2.3

DRAIN

GATE

SOURCE

0.1

+0.06

-0.02

+0.15

-0.05

2 PLACES

550

50

53

440

240

62

142

80

50

116

G

D

D

G

S

S

S

NE900100/NE900200 (CHIP)*

(Units in

µm)

S

S

D

G

4.0 MIN (ALL LEADS)

2.03 ± 0.2

0.51

1.02

0.1

1.6 MAX

PACKAGE OUTLINE 89A

NE900000 (CHIP)

(Units in

µm)