GSC4418

Page: 2/4

ISSUED DATE :2006/10/27

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Gate Threshold Voltage

1.5

-

3.0

V

Forward Transconductance

-

22

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=55 )

:

-

-

5

uA

-

-

14

-

-

17

Static Drain-Source On-Resistance

-

-

40

m

-

8.6

-

Gate-Source Charge

-

2.5

-

Gate-Drain (“Miller”) Change

-

4.9

-

nC

-

5.4

-

Rise Time

-

5.1

-

Turn-off Delay Time

-

14.4

-

Fall Time

-

3.7

-

ns

Input Capacitance

-

758

-

Output Capacitance

-

180

-

Reverse Transfer Capacitance

-

128

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.0

V

-

-

4.3

A

-

16.9

-

ns

Reverse Recovery Charge

-

6.6

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

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