GSC4418

Page: 1/4

ISSUED DATE :2006/10/27

REVISED DATE :

G

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSC4418 uses advanced trench technology to provide excellent on-resistance and low gate charge.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited

for use as a load switch or in PWM applications.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

M

0.10

0.25

B

4.80

5.00

H

0.35

0.49

C

3.80

4.00

L

1.35

1.75

D

0°

8°

J

0.375 REF.

E

0.40

0.90

K

45°

F

0.19

0.25

G

1.27 TYP.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±25

V

11.5

A

9.7

A

40

A

Total Power Dissipation

2.5

W

Linear Derating Factor

0.02

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient

Max.

Rthj-amb

50

/W

30V

14m

Pb Free Plating Product