DATA SHEET

www.onsemi.com

© Semiconductor Components Industries, LLC, 2002

June, 2022 − Rev. 3

1

Publication Order Number:

KS910/D

NPN Epitaxial Silicon

Transistor

KSP10

Features

• VHF/UHF Transistor

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ABSOLUTE MAXIMUM RATINGS

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VCBO

Collector−Base Voltage

30

V

VCEO

Collector−Emitter Voltage

25

V

VEBO

Emitter−Base Voltage

3.0

V

PC

Collector Power Dissipation (TA = 25°C)

350

mW

Derate above 25°C

2.8

mW/°C

PC

Collector Power Dissipation (TC = 25°C)

1.0

W

Derate above 25°C

8.0

W/°C

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

−55 to

150

°C

Rth(j−c)

Thermal Resistance, Junction to Case

125

°C/W

Rth(j−a)

Thermal Resistance, Junction to Ambient

357

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

MARKING DIAGRAM

TO−92 LF

CASE 135AR

A

= Assembly Code

KSP10 = Device Code

Y

= Year

WW

= Work Week

TO−92−3

CASE 135AN

1:Base

2:Emitter

3:Collector

Device

Package

Shipping

ORDERING INFORMATION

KSP10BU

TO−92 3

(Pb−Free)

10000 /

Bulk Bag

KSP10TA

TO−92 3 LF

(Pb−Free)

2000 /

Fan−Fold

AKS

P10

YWW

1 2

3

1

2

3