KSP10

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2

ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.)

Symbol

Parameter

Conditions

Min

Max

Unit

BVCBO

Collector−Base Breakdown Voltage

IC = 100 mA, IE = 0

30

−

V

BVCEO

Collector−Emitter Breakdown Voltage

IC = 1 mA, IB = 0

25

−

V

BVEBO

Emitter−Base Breakdown Voltage

IE = 10 mA, IC = 0

3.0

−

V

ICBO

Collector Cut−Off Current

VCB = 25 V, IE = 0

−

100

nA

IEBO

Emitter Cut−Off Current

VEB = 2 V, IC = 0

−

100

nA

hFE

DC Current Gain

VCE = 10 V, IC = 4 mA

60

−

−

VCE(sat)

Collector−Emitter Saturation Voltage

IC = 4 mA, IB = 0.4 mA

−

0.5

V

VBE(on)

Base−Emitter On Voltage

VCE = 10 V, IC = 4 mA

−

0.95

V

fT

Current Gain Bandwidth Product

VCE = 10 V, IC = 4 mA, f = 100 MHz

650

−

MHz

Cob

Output Capacitance

VCB = 10 V, IE = 0, f = 1 MHz

−

0.7

pF

Crb

Collector Base Feedback Capacitance

VCB = 10 V, IE = 0, f = 1 MHz

0.35

0.65

pF

Cc·rbb′

Collector Base Time Constant

VCB = 10 V, IC = 4 mA, f = 31.8 MHz

−

9.0

ps

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: PW ≤ 300 ms, Duty Cycle ≤ 2%.