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2SA2204 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SA2204 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SA2204 No. A0543-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1A, IB=--100mA --100 --200 mV Base-to-Emitterr Saturation Voltage VBE(sat) IC=--1A, IB=--100mA --0.85 --1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10µA, IE=0A --80 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=--100µA, RBE=0Ω --80 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --80 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0A --7 V Turn-On Time ton See specified Test Circuit. 40 ns Storage Time tstg See specified Test Circuit. 500 ns Fall Time tf See specified Test Circuit. 28 ns Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-003 7003-003 Switching Time Test Circuit 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP VR VCC= --40V VBE=5V + + 50 Ω INPUT OUTPUT RL 220 µF 470 µF PW=20 µs IB1 D.C. ≤1% IB2 IC= --10IB1=10IB2= --0.5A 1k Ω 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 2.3 2.3 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA |
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