Z0109MN datasheet(2/12 Pages) PHILIPS

2 / 12 page

Philips Semiconductors

Z0103/07/09 series

Triacs

Product data

Rev. 02 — 12 September 2002

2 of 12

9397 750 10102

Ordering information

3.1 Ordering options

Limiting values

Table 2:

Ordering information

Part Number

Voltage (VDRM)

Gate Sensitivity (IGT)

Package

Z0103MA

600 V

3 mA

SOT54B (TO-92)

Z0103NA

800 V

3 mA

SOT54B (TO-92)

Z0107MA

600 V

5 mA

SOT54B (TO-92)

Z0107NA

800 V

5 mA

SOT54B (TO-92)

Z0109MA

600 V

10 mA

SOT54B (TO-92)

Z0109NA

800 V

10 mA

SOT54B (TO-92)

Z0103MN

600 V

3 mA

SOT223

Z0103NN

800 V

3 mA

SOT223

Z0107MN

600 V

5 mA

SOT223

Z0107NN

800 V

5 mA

SOT223

Z0109MN

600 V

10 mA

SOT223

Z0109NN

800 V

10 mA

SOT223

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state voltage

°C ≤ Tj ≤ 125 °C

Z0103/07/09MA; Z0103/07/09MN

600

Z0103/07/09NA; Z0103/07/09NN

800

VRRM

repetitive peak reverse voltage

°C ≤ Tj ≤ 125 °C

Z0103/07/09MA; Z0103/07/09MN

600

Z0103/07/09NA; Z0103/07/09NN

800

ITSM

non-repetitive peak on-state current

full sine wave; Tj = 25 °C prior to surge;

Figure 2 and Figure 3

t=20ms

t = 16.7 ms

8.5

IT(RMS)

RMS on-state current

all conduction angles; Figure 4

SOT223

Tsp =90 °C-

SOT54B (TO-92)

Tlead =50 °C-

I2tI2t for fusing

= 10 ms

0.35

A2s

dIT/dt

rate of rise of on-state current

ITM = 1.0 A; IG =2xIGT; dIG/dt = 100 mA/µs

µs

IGM

peak gate current

tp =20 µs

1.0

PGM

peak gate power

2.0

PG(AV)

average gate power

over any 20 ms period

0.1

Tstg

storage temperature

−40

+150

°C

junction temperature

−40

+125

°C

Z0109MN Datasheet(PDF) 2 Page - NXP Semiconductors

Z0109MN Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL