2SC5057 datasheet(2/6 Pages) HITACHI

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2SC5057

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

1700

Collector to emitter voltage

CEO

900

Emitter to base voltage

EBO

Collector current

Collector surge current

C(surge)

Collector power dissipation

200

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at T

C = 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

voltage

(BR)CEO

900

—

C = 10 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

6—

—

E = 10 mA, IC = 0

Collector to emitter cutoff

current

CES

—

500

µA

CE = 1700 V, RBE = 0

DC current transfer ratio

——38

CE = 5 V, IC = 1 A

Collector to emitter saturation

voltage

CE(sat)

——5

C = 14 A, IB = 3.5 A

Base to emitter saturation

voltage

BE(sat)

—

1.5

C = 14 A, IB = 3.5 A

Fall time

—

0.5

µsec

CP =10 A, IB1 = 2 A

B2 Å –3 A, fH = 31.5 kHz

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