ECH8302

No.8247-1/4

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22805PE TS IM TB-00000078

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

ECH8302

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Features

•

Low ON-resistance.

•

4V drive.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--30

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--7

A

Drain Current (Pulse)

IDP

PW

≤10µs, duty cycle≤1%

--40

A

Allowable Power Dissipation

PD

1.6

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0

--30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--30V, VGS=0

--1

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0

±10

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--1.0

--2.4

V

Forward Transfer Admittance

yfs

VDS=--10V, ID=--3.5A

5.7

9.5

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--3.5A, VGS=--10V

19

25

m

Ω

RDS(on)2

ID=--2A, VGS=--4V

34

48

m

Ω

Input Capacitance

Ciss

VDS=--10V, f=1MHz

1400

pF

Output Capacitance

Coss

VDS=--10V, f=1MHz

310

pF

Reverse Transfer Capacitance

Crss

VDS=--10V, f=1MHz

230

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

13

ns

Rise Time

tr

See specified Test Circuit.

70

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

150

ns

Fall Time

tf

See specified Test Circuit.

90

ns

Total Gate Charge

Qg

VDS=--10V, VGS=--10V, ID=--7A

28

nC

Gate-to-Source Charge

Qgs

VDS=--10V, VGS=--10V, ID=--7A

4.8

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=--10V, VGS=--10V, ID=--7A

8.1

nC

Diode Forward Voltage

VSD

IS=--7A, VGS=0

--0.82

--1.2

V

Marking : JB

Ordering number : ENN8247