STAR1000 1M Pixel Radiation Hard
CMOS Image Sensor
STAR1000
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
, CA 95134-1709
•
408-943-2600
Document Number: 38-05714 Rev. *B
Revised January 5, 2007
Key Features
The STAR1000 sensor has the following characteristics:
• Integrating 3-transistor Active Pixel Sensor.
• 1024 by 1024 pixels on 15
µm pitch.
• Radiation tolerant design.
• On-chip double sampling circuit to cancel Fixed Pattern
Noise.
• Electronic shutter.
• Read out rate: up to 11 full frames per second.
• Region Of Interest (ROI) windowing.
• On-chip 10-bit ADC.
• Programmable gain amplifier.
• Ceramic JLCC-84 package.
• Available with BK7G18 glass and with N2 filled cavity.
Sensor Description
The STAR1000 is a CMOS image sensor with 1024 by 1024
pixels on a 15 mm pitch. It features on-chip Fixed Pattern
Noise (FPN) correction, a programmable gain amplifier, and a
10-bit Analog-to-Digital Converter (ADC).
All circuits are designed using the radiation tolerant design
rules for CMOS image sensors, to allow a high tolerance
against total dose effects.
Registers that are directly accessed by the external controller
contain the X- and Y- addresses of the pixels to be read. This
architecture provides flexible operation and allows different
operation modes such as (multiple) windowing, subsampling,
etc.
Two versions od sensors are available: STAR1000 and
STAR1000BK7. The STAR1000 has a quartz glass lid and the
cavity between the die and the lid is filled with air. The
STAR1000BK7 has a BK7G18 glass lid and the cavity is filled
with N2 which increases the temperature operating range.
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