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OPB856Z Datasheet(PDF) 2 Page - OPTEK Technologies |
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OPB856Z Datasheet(HTML) 2 Page - OPTEK Technologies |
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2 / 3 page ![]() OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue A .1 01/06 Page 2 of 3 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Wide Gap Optical Sensor OPB856Z Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage & Operating Temperature Range -40° C to +85° C Input Diode (See OP165 for additional information) Continuous Forward DC Current 40 mA Reverse Voltage 2 V Power Dissipation (1) 100 mW Output Phototransistor (See OP505 for additional information) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation (1) 100 mW Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C Notes: (1) Derate linearly 1.67 mW/°C above 25 ° C.. (2) Distance between lenses along the optical axis is “d”. (3) All parameters tested using pulse technique. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP9999 for additional information) VF Forward Voltage - - 1.7 V IF = 20 mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor (See OP9999 for additional information) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE = 0 Combined IC(ON) On-State Collector Current (3) 1.8 - - mA VCE = 5 V, IF = 20 mA, d = 2” ( (50.8 mm)(2) |
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