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TPW65R044MFD Datasheet(PDF) 3 Page - Wuxi Unigroup Microelectronics Company

Part # TPW65R044MFD
Description  650V Super-Junction Power MOSFET
PDF  8 Pages
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Manufacturer  WUMC [Wuxi Unigroup Microelectronics Company]
Direct Link  http://www.tsinghuaicwx.com/en/index.asp
Logo WUMC - Wuxi Unigroup Microelectronics Company

TPW65R044MFD Datasheet(HTML) 3 Page - Wuxi Unigroup Microelectronics Company

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TPW65R044MFD
Wuxi Unigroup Microelectronics Co.,Ltd
V1.0
www.tsinghuaicwx.com
Specifications T
J = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS = 0V, ID = 250µA
650
--
--
V
Zero Gate Voltage Drain Current
I
DSS
V
DS = 650V, VGS = 0V, TJ = 25º
C
--
--
10
μA
V
DS = 650V, VGS = 0V, TJ = 150ºC
--
--
10000
Gate-Source Leakage
I
GSS
V
GS = ±30V
--
--
±100
nA
Gate-Source Threshold Voltage
V
GS(th)
V
DS = VGS, ID = 250µA
3
--
5
V
Drain-Source On-Resistance
R
DS(on)
V
GS = 10V, ID = 36A
--
0.039
0.044
Ω
Gate resistance
R
G
f = 1.0MHz open drain
--
0.3
--
Ω
Dynamic
Input Capacitance
C
iss
V
GS = 0V,
V
DS = 100V,
f = 1.0MHz
--
7837
--
pF
Output Capacitance
C
oss
--
221
--
Reverse Transfer Capacitance
C
rss
--
13.2
--
Total Gate Charge
Q
g
V
DD = 520V, ID = 50A,
V
GS = 10V
--
165
--
nC
Gate-Source Charge
Q
gs
--
50
--
Gate-Drain Charge
Q
gd
--
70
--
Turn-on Delay Time
t
d(on)
V
DD = 400V, ID = 50A,
R
G = 25Ω
--
103
--
ns
Turn-on Rise Time
t
r
--
83
--
Turn-off Delay Time
t
d(off)
--
543
--
Turn-off Fall Time
t
f
--
93
--
Drain-Source Body Diode Characteristics
Body Diode Voltage
V
SD
T
J = 25º
C, I
SD = 36A, VGS = 0V
--
1.0
1.5
V
Reverse Recovery Time
t
rr
V
R = 400V, IF = 36A,
di
F/dt = 100A/μs
--
242
--
ns
Reverse Recovery Charge
Q
rr
--
1.45
--
μC
Peak Reverse Recovery Current
I
rrm
--
12
--
A
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
I
AS = 13.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3.
Identical low side and high side switch with identical R
G
3



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